| PART |
Description |
Maker |
| ESN26A030MK EGN26A030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A180IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| QPC1006EVB |
0.15 ?2.8 GHz High Power GaN SP3T Switch
|
TriQuint Semiconductor
|
| CLE545W |
High Power GaN Green LED Flat Window Hermetic Coaxial Package
|
Clairex Technologies, Inc
ETC[ETC]
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2N6671 2N6672 2N6673 |
HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS
|
List of Unclassifed Man...
ETC[ETC]
|
| 2SC2614 |
HIGH VOLTAGE HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BFN26 Q62702-F1065 BFN24 Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
